Product Summary
The BSM100GD120DN2 is an IGBT module.
Parametrics
BSM100GD120DN2 maximum ratings: (1)Chip temperature Tj: + 150 ℃; (2)Storage temperature Tstg: -55 to + 150 ℃; (3)Thermal resistance, chip case RthJC ≤ 0.182 K/W; (4)Diode thermal resistance, chip case RthJCD ≤ 0.36; (5)Insulation test voltage, t = 1min. Vis: 2500Vac; (6)Creepage distance: - 16 mm; (7)Clearance: - 11; (8)DIN humidity category, DIN 40 040: F; (9)IEC climatic category, DIN IEC 68-1: 55 / 150 / 56.
Features
BSM100GD120DN2 features: (1) Solderable Power module; (2)3-phase full-bridge; (3) including fast free-wheel diodes; (4) Package with insulated metal base plate.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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BSM100GD120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A FL BRIDGE |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
BSM100GAL120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
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BSM100GAL120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
Negotiable |
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BSM100GAR120DN2 |
Infineon Technologies |
IGBT Transistors 1200V 100A DUAL |
Data Sheet |
Negotiable |
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BSM100GB120DLC |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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