(Hong Kong)
Product Summary
The BSM25GD120DN2E3224 is an IGBT Power Module.
Parametrics
BSM25GD120DN2E3224 absolute maximum ratings: (1)Collector-emitter voltage, VCE: 1200 V; (2)Collector-gate voltage RGE = 20 kW, VCGR: 1200V; (3)Gate-emitter voltage, VGE: ±20V; (4)DC collector current, IC: 35A when TC = 25℃; 25A when TC = 80℃; (5)Pulsed collector current, tp = 1 ms, ICpuls: 70A when TC = 25℃; 50A when TC = 80℃; (6)Power dissipation per IGBT TC = 25℃, Ptot: 200W; (7)Chip temperature, Tj: + 150℃; (8)Storage temperature, Tstg: -40 to +125℃; (9)Thermal resistance, chip case RthJC: ≤0.6 K/W; (10) Diode thermal resistance, chip case, RthJCD: ≤ 1K/W; (11) Insulation test voltage, t = 1min, Vis: 2500Vac; (12) Creepage distance: 16 mm; (13) Clearance: 11mm; (14) DIN humidity category, DIN 40 040: F sec; (15) IEC climatic category, DIN IEC 68-1: 40/125/56 sec.
Features
BSM25GD120DN2E3224 features: (1) Power module; (2)3-phase full-bridge; (3) including fast free-wheel diodes; (4) Package with insulated metal base plate.
Diagrams
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 BSM25GD120DN2E3224 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 35A |
Data Sheet |
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BSM200GA120D |
Other |
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Data Sheet |
Negotiable |
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BSM200GA120DLC |
Infineon Technologies |
IGBT Modules 1200V 200A SINGLE |
Data Sheet |
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BSM200GA120DLCS |
Infineon Technologies |
IGBT Modules 1200V 200A SINGLE |
Data Sheet |
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BSM200GA120DN2 |
Infineon Technologies |
IGBT Modules 1200V 200A SINGLE |
Data Sheet |
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BSM200GA120DN2C |
Infineon Technologies |
IGBT Modules IGBT 1200V 200A |
Data Sheet |
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BSM200GA120DN2F |
Infineon Technologies |
IGBT Modules IGBT 1200V 200A |
Data Sheet |
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