Product Summary

The BSM50GB120DN2 is an IGBT power module.

Parametrics

BSM50GB120DN2 absolute maximum ratings: (1)Collector-emitter voltage, VCE: 1200 V; (2)Collector-gate voltage RGE = 20 kW, VCGR: 1200V; (3)Gate-emitter voltage, VGE: ± 20v; (4)DC collector current, IC: 78A when Tc=25℃; 50A when Tc=80℃; (5)Pulsed collector current, tp = 1 ms, ICpuls: 156A when TC = 25℃; 100A when TC = 80℃; (6)Power dissipation per IGBT, TC = 25℃, Ptot: 400W; (7)Chip temperature, Tj: + 150℃; (8)Storage temperature, Tstg: -55 to +150℃; (9)Thermal resistance, chip case, RthJC ≤ 0.3 K/W; (10) Diode thermal resistance, chip case RthJCD: ≤ 0.6K/W; (11) Insulation test voltage, t = 1min, Vis: 2500Vac; (12) Creepage distance: 20 mm; (13) Clearance: 11mm.

Features

BSM50GB120DN2 features: (1) Half-bridge; (2) including fast free-wheeling diodes; (3) Package with insulated metal base plate.

Diagrams

BSM50GB120DN2 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSM50GB120DN2
BSM50GB120DN2
Infineon Technologies
IGBT Modules 1200V 50A DUAL
Data Sheet
0-1: $44.28
1-5: $42.07
5-10: $39.85
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSM50GAL120DN2
BSM50GAL120DN2
Infineon Technologies
IGBT Modules 1200V 50A CHOPPER
Data Sheet
0-1: $35.08
1-10: $31.58
BSM50GB120DLC
BSM50GB120DLC
Infineon Technologies
IGBT Modules 1200V 50A DUAL
Data Sheet
0-1: $36.45
1-5: $34.63
5-10: $32.81
10-50: $30.13
BSM50GB120DN2
BSM50GB120DN2
Infineon Technologies
IGBT Modules 1200V 50A DUAL
Data Sheet
0-1: $44.28
1-5: $42.07
5-10: $39.85
BSM50GB170DN2
BSM50GB170DN2
Infineon Technologies
IGBT Modules 1700V 50A 500W HALF-BRIDGE
Data Sheet
0-1: $58.01
1-10: $52.20
BSM50GB60DLC
BSM50GB60DLC
Infineon Technologies
IGBT Modules 600V 50A DUAL
Data Sheet
0-1: $25.46
1-10: $22.92
BSM50GD120DLC
BSM50GD120DLC
Infineon Technologies
IGBT Modules 1200V 50A 3-PHASE
Data Sheet
0-1: $63.47
1-10: $57.12