Product Summary

The BSM75GD120DLC is an IGBT-module.

Parametrics

BSM75GD120DLC absolute maximum ratings: (1)collector-emitter voltage VCES: 1200 V; (2) DC-collector current TC = 25 ℃ IC: 125 A; (3) repetitive peak collector current tP = 1 ms, TC = 80℃ ICRM: 150 A; (4) total power dissipation TC=25℃, Transistor Ptot: 500 W; (5) gate-emitter peak voltage VGES: +/- 20V; (6) DC forward current IF: 75 A; (7) repetitive peak forw current tP = 1 ms IFRM: 150 A.

Features

BSM75GD120DLC features: (1) collector-emitter saturation voltage IC = 75A, VGE = 15V, Tvj = 125℃ VCE sat: 2.4 to 2.9 V; (2) gate threshold voltage IC = 3mA, VCE = VGE, Tvj = 25℃ VGE(th): 4.5 to 6.5 V; (3) gate charge VGE = -15V to+15V QG: 0,8μC; (4) input capacitance f = 1MHz,Tvj = 25℃,VCE = 25V, VGE = 0V Cies: 5.1nF; (5) reverse transfer capacitance f = 1MHz, Tvj = 25℃,VCE = 25V, VGE = 0V Cres: 0.33nF.

Diagrams

BSM75GD120DLC dimension

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