Product Summary
The BSM75GD120DLC is an IGBT-module.
Parametrics
BSM75GD120DLC absolute maximum ratings: (1)collector-emitter voltage VCES: 1200 V; (2) DC-collector current TC = 25 ℃ IC: 125 A; (3) repetitive peak collector current tP = 1 ms, TC = 80℃ ICRM: 150 A; (4) total power dissipation TC=25℃, Transistor Ptot: 500 W; (5) gate-emitter peak voltage VGES: +/- 20V; (6) DC forward current IF: 75 A; (7) repetitive peak forw current tP = 1 ms IFRM: 150 A.
Features
BSM75GD120DLC features: (1) collector-emitter saturation voltage IC = 75A, VGE = 15V, Tvj = 125℃ VCE sat: 2.4 to 2.9 V; (2) gate threshold voltage IC = 3mA, VCE = VGE, Tvj = 25℃ VGE(th): 4.5 to 6.5 V; (3) gate charge VGE = -15V to+15V QG: 0,8μC; (4) input capacitance f = 1MHz,Tvj = 25℃,VCE = 25V, VGE = 0V Cies: 5.1nF; (5) reverse transfer capacitance f = 1MHz, Tvj = 25℃,VCE = 25V, VGE = 0V Cres: 0.33nF.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BSM75GD120DLC |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 125A |
Data Sheet |
|
|
|||||||||||||
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
BSM75GAL120DN2 |
Infineon Technologies |
IGBT Modules 1200V 75A CHOPPER |
Data Sheet |
|
|
|||||||||||||
BSM75GAR120DN2 |
Infineon Technologies |
IGBT Transistors 1200V 100A GAR CH |
Data Sheet |
|
|
|||||||||||||
BSM75GB120DLC |
Infineon Technologies |
IGBT Modules 1200V 75A DUAL |
Data Sheet |
|
|
|||||||||||||
BSM75GB120DN2 |
Infineon Technologies |
IGBT Modules 1200V 75A DUAL |
Data Sheet |
|
|
|||||||||||||
BSM75GB120DN2_E3223 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 105A |
Data Sheet |
|
|
|||||||||||||
BSM75GB120DN2_E3223c-Se |
Infineon Technologies |
IGBT Modules IGBT 1200V 75A |
Data Sheet |
|
|