(Hong Kong)
Product Summary
The FF200R12KE3 is an IGBT-Module.
Parametrics
FF200R12KE3 maximum rated values: (1) collector-emitter voltage VCES: 1200 V; (2) IC, nom.: 200 A; (3) DC-collector current IC: 295 A; (4) repetitive peak collector current ICRM: 400 A; (5) total power dissipation Ptot: 1050 W; (6) gate-emitter peak voltage VGES: +/- 20 V.
Features
FF200R12KE3 characteristic values: (1) VCE sat: 1.7 to 2.15 V; (2) collector-emitter saturation voltage: 2 V; (3) gate threshold voltage: 5.0 to 6.5 V; (4) input capacitance Cies: 14.0nF; (5) collector-emitter cut-off current ICES: 5.0mA; (7) gate-emitter leakage current IGES: 400nA.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FF200R12KE3 |
Infineon Technologies |
IGBT Transistors 1200V 200A DUAL |
Data Sheet |
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FF200R12KE3_B2 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 295A |
Data Sheet |
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