Product Summary

The FF300R12KE3 is an IGBT-Module.

Parametrics

FF300R12KE3 maximum rated values: (1) collector-emitter voltage VCES: 1200 V; (2) IC, nom.: 300 A; (3) DC-collector current IC: 440 A; (4) repetitive peak collector current ICRM: 600 A; (5) total power dissipation Ptot: 1450 W; (6) gate-emitter peak voltage VGES: +/- 20 V.

Features

FF300R12KE3 characteristic values: (1) VCE sat: 1.70 to 2.15 V; (2) collector-emitter saturation voltage: 2.00 V; (3) gate threshold voltage: 5.0 to 6.5V; (4) input capacitance Cies: 21.0nF; (5) collector-emitter cut-off current ICES: 5.0mA; (7) gate-emitter leakage current IGES: 400nA.

Diagrams

FF300R12KE3 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FF300R12KE3
FF300R12KE3
Infineon Technologies
IGBT Transistors 1200V 300A DUAL
Data Sheet
0-1: $111.44
1-5: $105.88
5-10: $100.30
FF300R12KE3_B2
FF300R12KE3_B2
Infineon Technologies
IGBT Modules N-CH 1.2KV 480A
Data Sheet
0-6: $102.62
6-10: $92.35