(Hong Kong)
Product Summary
The BSM75GB120DN2 is an IGBT power module. It is a half-bridge module including fast free-wheeling diodes. The BSM75GB120DN2 is package with insulated metal base plate, the package is half-bridge 1. When it concerned to the technical parameters, the collector-emitter voltage is 1200V, the DC collector current is 105A.
Parametrics
BSM75GB120DN2 absolute maximum ratings:(1)Collector-emitter voltage, VCE: 1200V; (2)Collector-gate voltage, RGE = 20 kW, VCGR: 1200V; (3)Gate-emitter voltage, VGE, ±20A; (4)DC collector current, TC = 25 ℃, IC: 75A; (5)DC collector current, TC = 80 ℃, IC: 105A; (6)Pulsed collector current, tp = 1 ms, TC = 25 ℃, ICpuls: 210A; (7)Pulsed collector current, tp = 1 ms, TC = 80 ℃, ICpuls: 150A; (8)Power dissipation per IGBT, TC = 25 ℃, Ptot: 625W; (9)Chip temperature, Tj: +150℃; (10)Storage temperature, Tstg: -55 to +150℃; (11)Thermal resistance, chip case, RthJC, ＜0.2K/W; (12)Diode thermal resistance, chip case, RthJCD, ＜0.5K/W; (13)Insulation test voltage, t = 1min. Vis: 2500Vac; (14) Creepage distance: 20mm; (15) Clearance: 11mm; (16)DIN humidity category, DIN 40 040: F; (17)IEC climatic category, DIN IEC 68-1: 55 / 150 / 56.
Features
BSM75GB120DN2 features: (1) Half-bridge; (2) including fast free-wheeling diodes; (3) Package with insulated metal base plate.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 BSM75GB120DN2 |
Infineon Technologies |
IGBT Modules 1200V 75A DUAL |
Data Sheet |
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BSM75GB120DN2_E3223 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 105A |
Data Sheet |
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BSM75GB120DN2_E3223c-Se |
Infineon Technologies |
IGBT Modules IGBT 1200V 75A |
Data Sheet |
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