Product Summary

The FP15R12KE3 is a IGBT-Module.

Parametrics

Maximum rated values for diode rectifier: (1)repetitive peak reverse voltage at Tvj =25℃, VRRM: 1600 V; (2)RMS forward current per chip at TC =80℃, IFRMSM: 25 A; (3)maximum RMS current at Rectifier output at TC =80℃, IRMSmax: 36 A; (4)surge forward current at tP = 10 ms, Tvj = 150℃, IFSM: 158 A; (5)I2t - value at tP = 10 ms, Tvj = 150℃, I2t: 125 A2s.

Features

Specifications: (1)Configuration: Hex; (2)Collector- Emitter Voltage VCEO Max: 1200 V; (3)Continuous Collector Current at 25 C: 27 A; (4)Maximum Operating Temperature: + 125 ℃; (5)Package / Case: EASY2; (6)Maximum Gate Emitter Voltage: +/- 20 V; (7)Minimum Operating Temperature: - 40 ℃; (8)Mounting Style: Screw.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FP15R12KE3
FP15R12KE3

Infineon Technologies

IGBT Modules N-CH 1.2KV 27A

Data Sheet

0-1: $28.09
1-10: $25.28
FP15R12KE3G
FP15R12KE3G

Infineon Technologies

IGBT Transistors 1200V 15A PIM

Data Sheet

0-1: $41.70
1-5: $39.62
5-10: $37.53